NDLI: The effect of FSG stability at high temperature on stress-induced voiding in Cu dual-damascene interconnects

Content Provider	IEEE Xplore Digital Library
Author	Hyeok-Sang Oh JuHyuk Chung Jung-Woo Lee Ki-Ho Kang Dea-Gun Park SangRok Hah In-Soo Cho Kwang-Myeon Park
Copyright Year	2004
Description	Author affiliation: Syst. LSI Div., Samsung Electron. Co. Ltd., Kyunggi-Do, South Korea (Hyeok-Sang Oh; JuHyuk Chung; Jung-Woo Lee; Ki-Ho Kang; Dea-Gun Park; SangRok Hah; In-Soo Cho; Kwang-Myeon Park)
Abstract	The effect of FSG film properties as inter-metal dielectrics on stress-induced voiding (SIV) phenomena in Cu dual-damascene interconnects has been investigated with various FSG-films. HDPFSG and PEFSG2 showed less SIV failure than those of PEFSGI and 3. These behaviors of SIV according to FSG films agree well with desorbed amount of hydrogen, oxygen and fluorine ions from FSG films at high temperature over 400/spl deg/C. The result of SIMS analysis suggests that SIV phenomena are improved by application of stable FSG film without desorption at high temperature such as HDPFSG and PEFSG2 used in this work.
Sponsorship	IEEE Electron Devices Soc
Starting Page	21
Ending Page	23
File Size	237175
Page Count	3
File Format	PDF
ISBN	0780383087
DOI	10.1109/IITC.2004.1345671
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-06-09
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Stability Temperature Compressive stress Integrated circuit interconnections Testing Dielectrics Tin Silicon compounds Gases Thermal stresses
Content Type	Text
Resource Type	Article

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