NDLI: Comparison between HDP CVD and PECVD silicon nitride for advanced interconnect applications

Content Provider	IEEE Xplore Digital Library
Author	Yota, J. Janani, M. Camilletti, L.E. Kar-Roy, A. Liu, Q.Z. Nguyen, C. Woo, M.D. Hander, J. van Cleemput, P. Chang, W. Chiou, W.C. Li, L.J. Chao, L.C. Jang, S.M. Yu, C.H. Liang, M.S.
Copyright Year	2000
Description	Author affiliation: Adv. Process Technol., Conexant Syst., Newport Beach, CA, USA (Yota, J.)
Abstract	High-density plasma CVD (HDP CVD) silicon nitride has been investigated for its use in advanced interconnect applications. Results show that the HDP film has many excellent film properties and has many advantages over the plasma-enhanced CVD (PECVD) silicon nitride film. The HDP film has a higher film density, much lower hydrogen content, in addition to lower polish, wet-etch, and dry-etch rates, than the PECVD film. Therefore, the HDP silicon nitride is suitable and ideal as CMP and etch stop layers, as hard mask, and as Copper diffusion and oxidation barriers in damascene architectures.
Starting Page	76
Ending Page	78
File Size	311563
Page Count	3
File Format	PDF
ISBN	0780363272
DOI	10.1109/IITC.2000.854287
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-06-07
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Semiconductor films Copper Integrated circuit interconnections Hydrogen Plasma applications Etching Plasma properties Dielectrics Plasma density
Content Type	Text
Resource Type	Article

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Comparison between HDP CVD and PECVD silicon nitride for advanced interconnect applications