NDLI: Study on the stability of HDP-SiOF film and IMD application for 0.25 /spl mu/m LSI device

Content Provider	IEEE Xplore Digital Library
Author	Shin, H.J. Kim, S.J. Kim, B.J. Kang, H.K. Lee, M.Y.
Copyright Year	1998
Description	Author affiliation: Samsung Electron. Co., Yongin city, South Korea (Shin, H.J.)
Abstract	A multilevel interconnection technology using an HDP-CVD SiOF film is demonstrated for 0.25 /spl mu/m LSI devices. A stable HDP-SiOF film is realized as the intermetal dielectric (IMD). When HDP-SiOF has Si-F/sub 2/ bonds and silicon dangling bonds, the film stress changes during thermal stressing. This unstable HDP-SiOF causes deformation of the metal underlayer due to the film stress change. The device performance with a stable HDP-SiOF film is improved, showing a 12% reduction in wiring capacitance. In addition, gate oxide leakage characteristics are also superior to those of conventional undoped silicate glass (USG). The stable HDP-SiOF film has been successfully applied as an IMD layer for 0.25 /spl mu/m LSI devices.
Starting Page	211
Ending Page	213
File Size	521108
Page Count	3
File Format	PDF
ISBN	0780342852
DOI	10.1109/IITC.1998.704795
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Stability Large scale integration Thermal stresses Semiconductor films Compressive stress Silicon Capacitance Tensile stress Electrical resistance measurement Dielectrics
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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