NDLI: Impact of body tie and Source/Drain contact spacing on the hot carrier reliability of 45-nm RF-CMOS

Content Provider	IEEE Xplore Digital Library
Author	Arora, R. Moen, K.A. Madan, A. Cressler, J.D. Enxia Zhang Fleetwood, D.M. Schrimpf, R.D. Sutton, A.K. Nayfeh, H.M.
Copyright Year	2010
Description	Author affiliation: School of Electrical and Computer Engineering, 777 Atlantic Drive NW, Georgia Institute of Technology, Atlanta, 30332-0250 USA (Arora, R.; Moen, K.A.; Madan, A.; Cressler, J.D.) \|\| Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN-37212 USA (Enxia Zhang; Fleetwood, D.M.; Schrimpf, R.D.) \|\| IBM Semiconductor Research and Development Center, Hopewell Junction, NY 12533 USA (Sutton, A.K.; Nayfeh, H.M.)
Abstract	We report the hot carrier reliability (HCR) of 45-nm SOI CMOS technology. Body contacted devices are shown to be more reliable than floating-body devices. Two different body-contacting schemes are investigated (T-body and notched T- body). The effects of total dose irradiation on reliability are investigated. Body contacted devices are shown to be more tolerant to radiation than floating-body devices. Asymmetric halo doping devices show less hot carrier degradation than symmetric halo doping devices. In addition, we investigate the dependence of hot carrier reliability on the metal contact spacing of the Source/Drain (S/D) terminals, the PC-PC spacing, and the RF device performance trade-offs that result.
Starting Page	56
Ending Page	60
File Size	2426684
Page Count	5
File Format	PDF
ISBN	9781424485215
ISSN	19308841
e-ISBN	9781424485246
DOI	10.1109/IIRW.2010.5706486
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-10-17
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hot carriers Radio frequency Semiconductor device reliability CMOS integrated circuits Performance evaluation Electric fields reliability RFCMOS fT RF HCR S/D T-body
Content Type	Text
Resource Type	Article

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