NDLI: Towards Understanding Negative Bias Temperature Instability

Content Provider	IEEE Xplore Digital Library
Author	Grasser, T.
Copyright Year	2008
Description	Author affiliation: Tech. Univ. of Vienna, Vienna (Grasser, T.)
Abstract	Modeling efforts of negative bias temperature instability date back to the work of Jeppson and Svensson in 1977, who proposed the basic form of the popular reaction-diffusion model. This model is still at the heart of many modeling attempts today. However, recent research indicates that even refined variants of this model, while getting some features of NBTI right, cannot capture some crucial aspects of the phenomenon, most notably its ubiquitous logarithmically-decaying recovery phase. Consequently, alternative models have been developed. Some of these models, like the extensions based on dispersive transport of the released hydrogen species, predict like the underlying reaction-diffusion model, that the overall degradation is controlled by (dispersive) diffusion of hydrogen. Alternatively, some models assume that the actual depassivation reaction is the rate limiting step. On top of the creation of interface states, some authors have argued that trapped holes form a considerable part of the overall degradation. Despite all the efforts, however, no universally accepted theory of NBTI is available today, with published models covering only some aspects of the phenomenon and giving contradictory predictions of other aspects. This tutorial attempted to give a broad review of published modeling attempts, comparing their strengths and weaknesses, and eventually listing the requirements for a more complete model of NBTI.
Starting Page	145
Ending Page	145
File Size	753506
Page Count	1
File Format	PDF
ISBN	9781424421947
ISSN	19308841
DOI	10.1109/IRWS.2008.4796110
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-12
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Negative bias temperature instability Predictive models Niobium compounds Titanium compounds High-K gate dielectrics Semiconductor device modeling High K dielectric materials Data analysis Circuit testing Dispersion
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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