NDLI: Experimental Study of Temperature Dependence of Program/Erase Endurance of Embedded Flash Memories with 2T-FNFN Device Architecture

Content Provider	IEEE Xplore Digital Library
Author	Guoqiao Tao Chauveau, H. Som Nath
Copyright Year	2006
Description	Author affiliation: NXP Semicond., Nijmegen (Guoqiao Tao; Chauveau, H.; Som Nath)
Abstract	Most of the flash endurance results reported so far are typically in a temperature range of -40degC to +85degC, while devices in automotive "under the hood" applications can experience up to 150degC. This paper reports the temperature dependence of FN/FN based flash memories. Experiments have been carried out on 2.7Mb test memory arrays with temperatures up to 150degC. An empirical model has been developed to describe the temperature dependent degradation of the Vt window. This model fits the experimental data over the whole temperature range, and the endurance performance with single shot P/E cycles exceeds 1 million cycles
Starting Page	76
Ending Page	79
File Size	444887
Page Count	4
File Format	PDF
ISBN	1424402964
ISSN	19308841
DOI	10.1109/IRWS.2006.305215
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-10-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature dependence Flash memory Temperature distribution Degradation Testing Character generation Automotive engineering Electrons Interface states Manufacturing
Content Type	Text
Resource Type	Article

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Experimental Study of Temperature Dependence of Program/Erase Endurance of Embedded Flash Memories with 2T-FNFN Device Architecture