NDLI: Resistance transients in thin-film noise data [IC interconnects]

Content Provider	IEEE Xplore Digital Library
Author	Head, L.M.
Copyright Year	1997
Description	Author affiliation: State Univ. of New York, Binghamton, NY, USA (Head, L.M.)
Abstract	Noise measurements taken under accelerated stressing conditions do not work for the prediction of VLSI interconnect lifetime. This is because a crucial feature of the resistance changes under accelerated bias, which could provide insight into metallization reliability, is obscured by spectral analysis. Distinctive resistance transients occur sporadically during accelerated life testing and it is the presence of these transients that make Fourier analysis inappropriate. Recent work has shown that abrupt changes of resistance (ACRs) in a DC biased thin metal film can be correlated with voiding processes. It is the sensitivity of a measurement system designed to detect very low level noise fluctuations that allows one to detect these small resistance changes. The analysis of this data from a time-domain perspective has great potential for advancing the understanding of damage processes in metallization. This presentation provides details of the detection of resistance transients, evidence of their correlation to voiding processes, and data from a detection system designed to monitor the transients.
Starting Page	7
Ending Page	12
File Size	644710
Page Count	6
File Format	PDF
ISBN	0780342054
DOI	10.1109/IRWS.1997.660272
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-10-13
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Integrated circuit noise Transistors Noise measurement Acceleration Metallization Transient analysis Very large scale integration Spectral analysis Life estimation Life testing
Content Type	Text
Resource Type	Article

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