NDLI: Modeling of dynamic effects in a laser-driven semiconductor switch of high-power microwaves

Content Provider	IEEE Xplore Digital Library
Author	Kulygin, M.L. Denisov, G.G. Kocharovsky, V.V.
Copyright Year	2008
Description	Author affiliation: Inst. of Appl. Phys., Nizhny Novgorod (Kulygin, M.L.; Denisov, G.G.; Kocharovsky, V.V.)
Abstract	We investigate non-stationary problems of high-power microwaves penetrating into and reflecting from a semiconductor (silicon) plate. The plate is the base of switch activated by laser-driven photoconductivity and changing its properties when heated by the switched microwave power. Analytical criteria for the stationary solutions of the activated (quasi-metallic) and deactivated (dielectric) states of the switch under the conditions of high-power microwave heating and external cooling are found. Results of numerical simulations are also given for the problems of the switch activation by microwave heating initiated by pulsed laser radiation, which increases the carrier density rapidly. Numerical simulations are carried out by means of the finite-difference time-domain method with the unsplit perfectly matched layer absorbing boundary conditions. We demonstrate various types of solutions which depend on the basic parameters of the problem, namely, microwave field intensity, laser pulse energy and semiconductor doping..
Starting Page	1
Ending Page	1
File Size	514154
Page Count	1
File Format	PDF
ISBN	9781424421190
DOI	10.1109/ICIMW.2008.4665484
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-09-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article

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