NDLI: The influence of annealing parameters on the structure and optical and electrical properties of VO/sub x/ films

Content Provider	IEEE Xplore Digital Library
Author	Xiong Bifeng Yi Xinjian Li Yi Chen Sihai
Copyright Year	2000
Description	Author affiliation: State Key Lab. of Laser Technol., Huazhong Univ. of Sci. & Technol., Wuhan, China (Xiong Bifeng)
Abstract	Vanadium films have been deposited onto Si and quarts substrates by reactive ion-beam sputtering. The substrates are followed by annealing post-treatment. The treatment is performed in proper oxygen flow and temperature. The stoichiometry of thin films is measured by X-ray Photoelectron Spectroscopy (XPS) and X-Ray diffraction spectrum (XRD). The experimental results show that the VO/sub 2/ thin films have been formed by reactive ion-beam sputtering and annealing post-treatment, and that the resistivity change of VO/sub 2/ thin films by a factor larger than 10/sup 3/ can be obtained. It is evident that the annealing process is important to VO/sub 2/ thin films with excellent optical and electrical properties.
Starting Page	363
Ending Page	364
File Size	189536
Page Count	2
File Format	PDF
ISBN	0780365135
DOI	10.1109/ICIMW.2000.893065
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-09-12
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Sputtering Optical films Semiconductor films Temperature Spectroscopy X-ray diffraction Optical diffraction X-ray scattering Conductivity
Content Type	Text
Resource Type	Article

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