NDLI: Characterization through cathodoluminescence and thermoluminescence of $α-SiO_{2}$ single crystals before and after γ-radiation treatments : contribution to the evaluation of the influence of defects on the frequency-shifts

Content Provider	IEEE Xplore Digital Library
Author	Guibert, P. Chapoulie, R. Dubernet, S. Largeteau, A. Demazeau, G.
Copyright Year	2007
Description	Author affiliation: Univ. Michel de Montaigne-Bordeaux 3, Pessac (Guibert, P.; Chapoulie, R.; Dubernet, S.)
Abstract	The fiability and performances of quartz resonators are -in particular-dependent on point defects including chemical impurities either in substitution for the Si sites or in interstitial positions in the $α-SiO_{2}$ lattice. Such a research work is devoted to cathodoluminescence (CL) and thermoluminescence (TL) studies, before and after γ-radiation treatments, on different single crystals of $α-SiO_{2}$ [one being natural and four from hydrothermal processes]. Cathodoluminescence and thermoluminescence were selected as characterization techniques due to their complementarities concerning in particular their abilities to the detection of point defects (mainly impurities and ion vacancies) by their luminescence emission.
Starting Page	164
Ending Page	167
File Size	335752
Page Count	4
File Format	PDF
ISBN	9781424406463
ISSN	10756787
DOI	10.1109/FREQ.2007.4319055
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-05-29
Publisher Place	Switzerland
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Impurities Crystals Frequency Optical resonators Luminescence Crystalline materials Optical materials Excitons Heating Chemicals
Content Type	Text
Resource Type	Article

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