NDLI: Characterization of low-dislocation synthetic quartz grown on highly distorted seed by X-ray topography

Content Provider	IEEE Xplore Digital Library
Author	Shinohara, A.H. Iano, M.C. Suzuki, C.K. Mikawa, Y.
Copyright Year	1999
Description	Author affiliation: Dept. of Mater. Eng., Univ. Estadual de Campinas, Sao Paulo, Brazil (Shinohara, A.H.)
Abstract	In the present study, the feasibility to grow a dislocation-free synthetic quartz with large Z-region from a seed containing high density of dislocation is reported. For such purpose, a seed with new geometric design was prepared. A seed long in Y-direction and containing V-shaped cuts with cutting angle of 90/spl deg/ made on Z-face {0001} was prepared and grown in the hydrothermal process. As a result, new growth regions usually not found in the conventional Y- and Z-bars synthetic quartz crystals have been imaged by the X-ray topography. The new growth region grown from the V-shaped cut was composed with two sub-regions of distinct textures. Due to their high growth velocity perpendicularly to cut faces, they disappeared and were replaced by the so-called Z-region. However these newly grown sub-regions played an important role to change the direction of dislocation propagation present in the seed trapping them and minimizing their propagation into the grown Z-region.
Starting Page	766
Ending Page	768
File Size	271311
Page Count	3
File Format	PDF
ISBN	0780354001
ISSN	10756787
DOI	10.1109/FREQ.1999.841417
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-04-13
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Crystallization Surfaces Crystalline materials X-ray imaging Etching Crystals Conducting materials Cellular networks Satellites Frequency
Content Type	Text
Resource Type	Article

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