NDLI: Helical etch channels in synthetic quartz crystals

Content Provider	IEEE Xplore Digital Library
Author	Mikawa, Y. Hatanaka, M. Banno, Y.
Copyright Year	1998
Description	Author affiliation: Fine Crystal Ltd., Hokkaido, Japan (Mikawa, Y.)
Abstract	Helical etch channels were found in the synthetic quartz crystal etched by both aqueous hydrofluoric acid (HF) solution at 20/spl deg/C and ammonium fluoride (NH/sub 4/F)+ HF mixture solution at 60/spl deg/C. The quartz crystal used in this study contained many dislocations caused by the damaged layer of the seed surface. The etch channel density amounted to 2/spl times/10/sup 4/ pcs/cm/sup 2/ and about 0.5% of them showed helical form. The distortion of the crystal was measured by X-ray reflection and the change of the parallelism of the lattice planes was observed: the crystal was curving. The direction of change of lattice planes suggests that a tension acts in the crystals. The cause of helical etch channel formation is explained as follows. Due to the tension, the growth direction of the dislocations are bent along weaker bonded lattice planes (for example R-planes) corresponding to the anisotropy of quartz. Thus, after etching, helical etch channels are formed.
Starting Page	801
Ending Page	805
File Size	893648
Page Count	5
File Format	PDF
ISBN	0780343735
ISSN	10756787
DOI	10.1109/FREQ.1998.717991
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-05-29
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Etching Crystals Hafnium Lattices Temperature Scanning electron microscopy Needles Optical microscopy Heating Surface cracks
Content Type	Text
Resource Type	Article

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