NDLI: Nonvolatile memory performances of transparent and/or flexible memory thin-film transistors using IGZO channel and ZnO charge-trap layers

Content Provider	IEEE Xplore Digital Library
Author	So-Jung Kim Won-Ho Lee Sung-Min Yoon
Copyright Year	2015
Description	Author affiliation: Dept. of Adv. Mater. Eng. for Inf. & Electron., Kyung Hee Univ., Yongin, South Korea (So-Jung Kim; Won-Ho Lee; Sung-Min Yoon)
Abstract	We proposed a transparent and/or flexible charge-trap-type memory thin film transistors (CTM-TFTs) with a top-gate structure composed of zinc-oxide (ZnO) charge-trap and In-Ga-Zn-O (IGZO) active channel layers. The memory on/off ratio higher than 7-orders-of magnitude was obtained for the fully transparent CTM-TFTs fabricated on glass substrates when the width and amplitude of program pulses were set as 500 ns and ±20 V, respectively. The nonvolatile memory behaviors was successfully confirmed for the memory window to be as wide as 25.8 V. Furthermore, the highly stable memory performance was also guaranteed even under the light illumination conditions using various wavelength in the visible range. The memory operations of the flexible CTM-TFTs prepared on plastic polyethylene naphthalate substrates will also be discussed at presentation.
Starting Page	21
Ending Page	23
File Size	1345796
Page Count	3
File Format	PDF
ISBN	9784863484771
DOI	10.1109/AM-FPD.2015.7173185
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-07-01
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	JSAP
Subject Keyword	Nonvolatile memory II-VI semiconductor materials Glass Logic gates Zinc oxide Leakage currents Substrates
Content Type	Text
Resource Type	Article

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