NDLI: Microstructural change of Ag nanoporous bonding joint and interdiffusion of Cu / Ag during thermal aging

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2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

LTB-3D conference committee

Low temperature bonding for 3D

Three dimensional dynamic random access memory

Process development for 3D integration: Conductive wafer bonding for high density inter-chip interconnection

Brick-like based KGDs self-assembly and connection technologies for 3DIC integration

Copper-to-dielectric heterogeneous bonding for 3D integration

Scaling of 3D interconnect technology incorporating metal-metal bonds to pitches of 10 microns and below for infrared focal plane array applications

3D integration applications for low temperature direct bond technology

Low temperature wafer bonding for wafer-level 3D integration

Nanobonding - A key technology for emerging applications in health and environmental sciences

Mechanical grinding of Au/SiO2 hybrid-bonded substrates for 3D integrated image sensors

Cu/dielectric hybrid bonding using surface-activated bonding (SAB) technologies for 3D integration

Via-last/backside-via 3D integration using a visible-light laser debonding technique

Highly thermoresistant temporary bonding/debonding system without organic adhesives for 3D integration

Surface-tension driven self-assembly for VCSEL chip bonding to achieve 3D and hetero integration

Coupling efficiency between laser diode and optical isolator integrated by photosensitive adhesive bonding

Investigation of high temperature process for III-V/SOI hybrid photonic devices with AlInAs oxidation current confinement layer

InAs/GaAs quantum dot lasers metal-stripe-bonded onto SOI substrate

Fabrication of walk-off compensating wavelength-conversion devices with stacks of multiple plates by use of room-temperature bonding

Light propagation properties of Si waveguides after removing III–V layer on a III–V/SOI wafer fabricated by plasma activated bonding

Epitaxial growth of GaInAsP system on wafer-bonded InP/Si substrate

Large-scale Ge-on-Insulator wafers using low-temperature bonding and Epitaxial Lift-Off (ELO) technique

Carbon nanotube bump interconnect for flexible multilayer substrates

Room temperature direct bonding of Si wafers smoothed by Ne beam irradiation

Room temperature bonding of electroplated Au patterns with atomically smooth surface prepared by a replication process using a sacrificial layer

Room-temperature wafer bonding with smooth Au thin film in ambient air using Ar RF plasma activation

Room temperature bonding of sapphire with sapphire or metal substrates in Air using Au films

Room temperature bonding of wafers in air using Au-Ag alloy films

Improvement of thermoelectric TiZrNiSn thin films by contact layers

Micromechanical view of heterointegration by wafer bonding and layer splitting

GaN on h-BN technology for release and transfer of nitride devices

Integration of III–V materials and Si-CMOS through double layer transfer process

Heterogeneous integration by wafer-to-wafer transfer technology

Low-temperature bonding technologies for MEMS and 3D-IC

Thermal activation of Au/Ti by interdiffusion for getter film integration in wafer-level vacuum packaging

Fabrication of miniaturized polarization sensors using flip-chip bonding with atmospheric-pressure plasma activation

Thermocouples fabricated on microfluidic trench sidewall capped with film

Surface activated bonding method applied in MEMS pressure sensor with TSV structures

Wafer-level packaging for harsh environment application

Cu/Cu direct bonding by metal salt generation bonding technique with organic acid and its persistence of reformed layer

Real time FITR spectroscopic and kinetic studies of Cu surface reduction by using formic acid vapor

Microstructural change of Ag nanoporous bonding joint and interdiffusion of Cu / Ag during thermal aging

The effect of Cu particle additions on the microstructure and melting point of Sn-Bi solder for die attachment

Room-temperature vacuum packaging using ultrasonic bonding with Cu compliant rim

In-situ observation of ultrasonic bonding using high speed camera

Nanoporous gold as a versatile bonding intermediate

Low temperature and low pressure bump bonding realized by single-micrometer Ag-nanoparticle bumps

Fine-pitch interconnection by hybrid Cu/Sn-adhesive bonding for 3D integration

New bonding material for power devices with high bonding strength for operating high temperature

Directly bonded Ge/GaAs by surface activated bonding for high efficiency III–V multi-junction solar cells

Effects of annealing on GaAs/Si bonding interfaces for hybrid tandem solar cells

Annealing temperature dependence of SAB based Si/Si junctions

Investigation on the effects of annealing process on the electrical properties of $n^{+}-Si/n-SiC$ junctions

Annealing characteristics of $p^{+}-Si/n-4H-SiC$ junctions by using surface-activated bonding

SiC wafer bonding by modified suface activated bonding method

100 mm diameter mono-crystalline 4H-SiC/polycrystalline-SiC bonded wafers fabricated by SAB for power device

Low temperature metal bonding for 3D and power device packaging

Metal-assisted hermetic wafer-level packaging

Solid Liquid Inter-Diffusion bonding at low temperature

Direct bonding for dissimilar metals assisted by carboxylic acid vapor

2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration

Microstructural change of Ag nanoporous bonding joint and interdiffusion of Cu / Ag during thermal aging

Content Provider	IEEE Xplore Digital Library
Author	Min-Su Kim Nishikawa, H.
Copyright Year	2014
Description	Author affiliation: Joining & Welding Res. Inst., Osaka Univ., Ibaraki, Japan (Min-Su Kim; Nishikawa, H.)
Abstract	We proposed the low temperature solid state die-attach process using Ag nanoporous sheet for the high temperature power electronic packaging. The sound Cu/Cu joint can be achieved at 300 °C under nitrogen atmosphere through Ag nanoporous bonding method. In this study, the thermal stability of The Ag nanoporous bonding Cu/Cu joint and the interdiffusion behavior between Ag joining material and Cu substrate during thermal aging at 250 °C were investigated. The inserted Ag layer shows porous layer and this porous structure is gradually densified with extension of aging time. Kirkendall voids induced interdiffusion of Cu/Al are also identified.
Starting Page	42
Ending Page	42
File Size	419611
Page Count	1
File Format	PDF
ISBN	9781479952601
e-ISBN	9781479952618
DOI	10.1109/LTB-3D.2014.6886181
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-07-15
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Scanning electron microscopy Materials Aging Packaging Educational institutions Joints Bonding
Content Type	Text
Resource Type	Article

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