NDLI: Photoresist residue defect by etch byproduct on PIP etch process

Content Provider	IEEE Xplore Digital Library
Author	Sim Ming Dau Oh Sang Hun Chai Chin Chin Lee Eng Eng You Hyuk Joon Lee Boon Chun
Copyright Year	2015
Description	Author affiliation: X-FAB Sarawak Sdn. Bhd., Kuching, Malaysia (Sim Ming Dau; Oh Sang Hun; Chai Chin Chin; Lee Eng Eng; You Hyuk Joon; Lee Boon Chun)
Abstract	This paper shows the study of the effect of etch by product towards photoresist residue defect found in Polysilicon-Insulator-Polysilicon (PIP) processes. Initial finding show the correlation with the big size poly PIP capacitor structure. Therefore, the challenge was to focus on big size PIP structure. But during partition check, we found the weakness of the photoresist stripping during O2 plasma ashing. The weakness show not only big size pattern but also small size area. Through EDX analysis, we found Si byproduct block oxygen reaction with photoresist. As a consequence, following sulfuric clean has no margin to remove all photoresist which cause photoresist residue on big size of pattern. Several approaches were carried out to identify the optimal solution for defect removal. And, it was found that the additional sulfuric clean without HF is best solution. The photoresist residue defect was then eliminated completely with the new cleaning condition.
Starting Page	1
Ending Page	4
File Size	658115
Page Count	4
File Format	PDF
e-ISBN	9781479985500
DOI	10.1109/RSM.2015.7355010
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-08-19
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Etch byproduct Resists Photoresist residue Logic gates Cleaning Silicon Polymers Standards HF Thickness measurement
Content Type	Text
Resource Type	Article

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