NDLI: Body doping analysis of vertical strained-SiGe Impact Ionization MOSFET incorporating dielectric pocket (VESIMOS-DP)

Content Provider	IEEE Xplore Digital Library
Author	Saad, I. Zuhir, H.M. Bun Seng, C. Pogaku, D. Bakar, A.R.A. Khairul, A.M. Ghosh, B. Bolong, N. Ismail, R. Hashim, U.
Copyright Year	2013
Description	Author affiliation: Inst. of Nano Electron. Eng. (INEE), Univ. Malaysia Perlis (UniMAP), Kangar, Malaysia (Hashim, U.) \|\| Fac. of Electr. Eng., Univ. Teknol. Malaysia, Skudai, Malaysia (Ismail, R.) \|\| Nano Eng. & Mater. (NEMs) Res. Group, Univ. Malaysia Sabah, Kota Kinabalu, Malaysia (Saad, I.; Zuhir, H.M.; Bun Seng, C.; Pogaku, D.; Bakar, A.R.A.; Khairul, A.M.; Ghosh, B.; Bolong, N.)
Abstract	The Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET with Dielectric Pocket (VESIMOS-DP) has been successfully developed and analyzed in this paper. There are significant drop in subthreshold slope (S) while threshold voltage is increase as the body doping concentration increases. It is notable that for body doping concentration above $10^{20},$ the S values keep increasing which is not recommended as the switching speed getting higher distracting performance of the device. An improved stability of threshold voltage, $V_{TH}$ was found for VESIMOS-DP device of various DP size ranging from 20nm to 80nm. The stability is due to the reducing charge sharing effects between source and drain region. In addition, the output characteristic was also highlighted a very good drain current at different gate voltage with the increasing of drain voltage for VESIMOS-DP with high body doping concentration. VESIMOS-DP with low body doping concentration suffers PBT effect that prevents the device from being able to switch off. Hence, high body doping concentrations are imperative for obtaining better device characteristics and ensure the device works in II mode.
Sponsorship	IEEE Electron Devices Soc.
Starting Page	336
Ending Page	339
File Size	247063
Page Count	4
File Format	PDF
e-ISBN	9781479911837
DOI	10.1109/RSM.2013.6706544
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-09-25
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Performance evaluation MOSFET VESIMOS VESIMOS-DP Doping Parasitic Bipolar Effects IMOS Silicon germanium Impact ionization Threshold voltage Silicon Nano-electronics Dielectric Pocket
Content Type	Text
Resource Type	Article

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