NDLI: Schottky contact in P-HEMT wafer using metallization with Ge/Au/Ni/Au

Content Provider	IEEE Xplore Digital Library
Author	Dolah, A. Hamid, M.A.A. Deraman, M. Yusof, A. Ngah, N.A. Muhammad, N.F.I.
Copyright Year	2013
Description	Author affiliation: APT Lab., TM R&D Sdn. Bhd., Cyberjaya, Malaysia (Dolah, A.; Hamid, M.A.A.; Deraman, M.; Yusof, A.; Ngah, N.A.; Muhammad, N.F.I.)
Abstract	An interface layer between a metal and a semiconductor, can either be an Ohmic or Schottky contact. Schottky is barrier height defined the rectifying properties of the device. In manufacturing semiconductor devices, Schottky contact on metal-semiconductor interface are essentially for achieving good rectifying properties. In this study, Schottky contact were fabricated on AlGaAs HEMTs structure. An AlGaAs epi wafer was supply by the vendor. AlGaAs substrate was cleaned using wet chemical etching. Electrodes were fabricated through a sequenced of lithography, cleaning, sputtering and lift-off processes. The electrodes were made with metal layers of Ge, Au and Ni. Parameters such as metal thickness and annealing temperatures (from $300^{o}C$ to $400^{o}C)$ were vary during fabrication process. Electrical characterizations after annealing are carried out using current-voltage (I-V) measurement are used to calculated Schottky barrier and Ideality Factor. The Schottky barrier increased with increasing annealing temperature until 400°C however Schottky barriers height and Ideality Factor does not varies much with metallization time. The highest Schottky barrier achieved is below 1.0eV with Ideality Factor 5.
Sponsorship	IEEE Electron Devices Soc.
Starting Page	134
Ending Page	138
File Size	254162
Page Count	5
File Format	PDF
e-ISBN	9781479911837
DOI	10.1109/RSM.2013.6706491
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-09-25
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gold Annealing Temperature Metallization Schottky barriers Nickel
Content Type	Text
Resource Type	Article

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