NDLI: Effect of Reverse Gate Bias on hot-carrier reliability in OCB Trench MOSFET for solar cell applications

Content Provider	IEEE Xplore Digital Library
Author	Minghao Jin Xiao Fu
Copyright Year	2012
Description	Author affiliation: Joule Physics Laboratory, University of Salford (presenter), Greater Manchester, United Kingdom (Minghao Jin) \|\| British Chinese Culture Co. Ltd., Greater Manchester, United Kingdom (Xiao Fu)
Abstract	This work describes the hot carrier reliability analysis of a 100V Oxide Charge Balanced (OCB) Trench MOSFET in solar cell applications. Device degradation is studied on the OFF states with a Reverse Gate Bias (RGB) condition. The detail of the properly designed experiment is presented, which identifies distinctive acceleration phenomenon associated to Hot Carrier Injection (HCI). Adopting the TCAD simulation tools, the electrical characteristics of OCB trench MOSFET under reverse gate bias stress condition has been properly-calibrated. The mechanism underlying HCI degradation that affects the OFF state lifespan of an OCB device is explained.
Starting Page	1
Ending Page	4
File Size	1004344
Page Count	4
File Format	PDF
ISBN	9781467317221
e-ISBN	9781908549006
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-09-07
Publisher Place	United Kingdom
Access Restriction	Subscribed
Rights Holder	CACSUK
Subject Keyword	Degradation Human computer interaction TCAD simulation OCB Trench MOSFET MOSFET circuits Logic gates Hot carriers Threshold voltage Hot carrier degradation Stress HCI
Content Type	Text
Resource Type	Article

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Effect of Reverse Gate Bias on hot-carrier reliability in OCB Trench MOSFET for solar cell applications