NDLI: Early voltages associated with temperature effects on strained MOSFET devices

Content Provider	IEEE Xplore Digital Library
Author	Hsin-Chia Yang Yen-Chen Lin Guan-Hao Shen Wen-Shang Liao Chi-Wen Chen SungChing Chi
Copyright Year	2014
Description	Author affiliation: Dept. of Electron. Eng., Minghsin Univ. of Sci. & Technol., Hsinchu, Taiwan (Hsin-Chia Yang; Yen-Chen Lin; Guan-Hao Shen; Wen-Shang Liao; Chi-Wen Chen; SungChing Chi)
Abstract	Nano-process MOSFET devices are considered to be upgraded by strained engineering technique. Mismatched lattice constants between SiGe and silicon is used to form global strain over the whole devices, while silicon nitride as contact etching stop layer (CESL) is applied to the top of the devices to squeeze the devices uni-axially. Both are found to be capable of enhancing the electrical properties compared to the ones of devices without either. The 1.5 nm silicon cap is introduced for the benefit of forming gate oxide. $I_{D}-V_{D}$ characteristics curves are apparently improved as the strained engineering technique is taken into account. The variations of Early voltages at different temperatures are determined and found to vanish at certain gate bias, denoted by $V_{G}.$ This regularity of Early Voltage can be addressed by modeled lambda parameters which is $V_{G}$ dependent and thus associated with the depletion region width underneath the gate oxide.
Sponsorship	IEEE Sapporo Sect.
Starting Page	2080
Ending Page	2083
File Size	171627
Page Count	4
File Format	PDF
ISBN	9781479931965
e-ISBN	9781479931972
DOI	10.1109/InfoSEEE.2014.6946290
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-04-26
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET CMOS Early voltage Tensile strain Compressive strain Temperature effects Logic gates MOSFET circuits Space charge Silicon Strain Silicon germanium
Content Type	Text
Resource Type	Article

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