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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Hossain, D. Siddiq, A.B. Sarker, S. Islam, M.M. Islam, R. |
| Copyright Year | 2015 |
| Description | Author affiliation: Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol., Khulna, Bangladesh (Hossain, D.; Siddiq, A.B.; Sarker, S.; Islam, M.M.; Islam, R.) |
| Abstract | A simple analytical approach is presented to investigate the energy band structure of graphene under the application of shear strain. The strain-induced deformation in the unit cell in terms of the angle between two unit vectors is taken into consideration in the framework of nearest neighbor tight binding model. The proposed approach is applied to evaluate the energy band gap in graphene structure under shear strained condition. The results obtained from the proposed approach are compared with those of repo calculation and they are found to be in good agreement. This demonstrates that the proposed approach can be applied to calculate the band gap energy in shear strained graphene. |
| Starting Page | 428 |
| Ending Page | 431 |
| File Size | 729524 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781467392563 |
| e-ISBN | 9781467392570 |
| DOI | 10.1109/EICT.2015.7391990 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2015-12-10 |
| Publisher Place | Bangladesh |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Band structure Analytical approach Graphene Tight binding model Shear strain |
| Content Type | Text |
| Resource Type | Article |
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