NDLI: III-V/Si heterojunctions for steep subthreshold-slope transistor

Content Provider	IEEE Xplore Digital Library
Author	Tomioka, K. Fukui, T.
Copyright Year	2013
Description	Author affiliation: Grad. Sch. of Inf. Sci. & Technol., Hokkaido Univ., Sapporo, Japan (Tomioka, K.; Fukui, T.)
Abstract	Main target in future LSI is to achieve low power consumption while enhancing performance. There are many concerns to lower the power consumption in recent CMOS technologies, such as multi-gate architecture for suppressing short-channel effect and OFF-state leakage current. The state-of-the-art FET offered by the gate structure surely reduces the power dissipation, but the power-scaling will be limited by FET in itself since the reduction in supply voltage in Si-based MOSFETs has some difficulties, such as low carrier mobility under lower electrical field and physically limited subthreshold slope (SS). Especially, utilization of steep subthreshold-slope transistor such as tunnel FETs (TFETs) and impact ionization FETs is important for the low power circuits because physical limitation due to carrier thermal diffusion stops a scaling of the power consumption even if the multi-gate structure and III-Vs are utilized. Thus, another channel materials and transport mechanisms should be addressed mutually in CMOS technologies, and these distinct features should possess good compatibility with the Si-based CMOS. In this regard, heterojunctions formed across the III-V nanowire (NW) and Si would be promising building blocks for the future extended CMOS technologies. Here, we present integration of III-V nanowires on Si by selective-area growth and concept for steep SS transistor using III-V nanowire/Si heterojunctions.
Sponsorship	IEEE
Starting Page	1
Ending Page	2
File Size	395701
Page Count	2
File Format	PDF
ISBN	9781479933723
DOI	10.1109/E3S.2013.6705870
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-10-28
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Power demand Switches Heterojunctions CMOS technology Silicon CMOS integrated circuits Transistors
Content Type	Text
Resource Type	Article

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