NDLI: Post-bond sub-500 nm alignment in 300 mm integrated face-to-face wafer-to-wafer Cu-Cu thermocompression, Si-Si fusion and oxideoxide fusion bonding

Content Provider	IEEE Xplore Digital Library
Author	Teh, W.H. Deeb, C. Burggraf, J. Arazi, D. Young, R. Senowitz, C. Buxbaum, A.
Copyright Year	2010
Description	Author affiliation: ISMI, Metrology, 257 Fuller Road, Albany, NY 12203 (Deeb, C.) \|\| SEMATECH (Intel Assignee), 3D Interconnect, 257 Fuller Road, Albany, NY 12203 (Teh, W.H.) \|\| EV Group, DI Erich Thallner Strasse 1, 4782 St. Florian/Inn, Austria (Burggraf, J.; Arazi, D.) \|\| FEI Company, 5350 NE Dawson Creek Dr., Hillsboro, OR 97124 (Young, R.; Senowitz, C.; Buxbaum, A.)
Abstract	We report recent advances in tool and process hardening of a first of its kind 300 mm wafer-to-wafer (WtW) preprocessing, aligning, and bonding integrated tool. We have demonstrated sub-500 nm post-bond alignment accuracies for 300 mm WtW face-to-face (FtF) Cu-Cu thermocompression bonds, WtW FtF Si-Si fusion bonds, and WtW FtF oxideoxide fusion bonds. All process of record (POR) recipes that were developed had undetectable voids based on scanning acoustic microscope (C-SAM) measurements on representative bonded Cu, oxide, and Si blanket wafers. Optimized bonded patterned wafer splits in the Cu-Cu WtW thermocompression bonding step have shown alignment accuracies down to ∼190 nm, the highest accuracy to date. Using an infrared-enabled, high speed focused ion beam (FIB) system (with XeF2) with a CAD overlay function to assist in selective sample preparation, we have verified that the bonding interfaces at the via chain structures with 1–5 μm diameter vias show no interfacial voids. Also, there is evidence of Cu interdiffusion, as supported by transmission electron microscopy (TEM) and electron backscattering diffraction (EBSD) data.
Starting Page	1
Ending Page	6
File Size	461513
Page Count	6
File Format	PDF
ISBN	9781457705267
e-ISBN	9781457705274
DOI	10.1109/3DIC.2010.5751447
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-11-16
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Accuracy Silicon Three dimensional displays Copper Bonding Plasma temperature
Content Type	Text
Resource Type	Article

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