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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Hilsenbeck, J. Lenk, F. Heinrich, W. Wurfl, J. |
| Copyright Year | 2003 |
| Description | Author affiliation: Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany (Hilsenbeck, J.; Lenk, F.; Heinrich, W.; Wurfl, J.) |
| Abstract | We report on the technology and performance of fully monolithic coplanar voltage-controlled oscillators (VCOs) with GaInP/GaAs-HBTs as the active devices. With our optimized HBT process, the parasitic base resistance R/sub B/ and extrinsic base-collector capacitance C/sub EX/ are significantly reduced. In this way, the maximum frequency of oscillation F/sub max/ is increased from 100 to 170 GHz. This allows us to realize fundamental 38 GHz-VCOs with very low phase noise. At an oscillation frequency F/sub res/=34.2/spl plusmn/0.2 GHz, the VCO reaches phase noise levels of -87 dBc/Hz @ 100 kHz and -108 dBc/Hz @ 1 MHz offset frequency, respectively. To our knowledge, these phase noise values are the lowest GaAs data for Ka-band applications reported so far. |
| Sponsorship | IEEE Elec. Devices Soc |
| Starting Page | 223 |
| Ending Page | 226 |
| File Size | 333221 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780378334 |
| ISSN | 10647775 |
| DOI | 10.1109/GAAS.2003.1252399 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2003-11-09 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Phase noise Metallization Voltage-controlled oscillators Gallium arsenide Bit error rate Radar MMICs Frequency Heterojunction bipolar transistors Noise level |
| Content Type | Text |
| Resource Type | Article |
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