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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Zirath, H. |
| Copyright Year | 2003 |
| Description | Author affiliation: Dept. of Microtechnology & Nanoscience, Chalmers Univ. of Technol., Goteborg, Sweden (Zirath, H.) |
| Abstract | Recent results from a Swedish program for development of 60 GHz MMICs for high data rate communication links are presented as well as results from similar programs in Europe. A GaAs PHEMT technology has been used for the realization of front-end circuits such as mixers, amplifiers, frequency multipliers, IF-amplifiers with gain-control, and VCOs. The GaAs PHEMT technology proved to give excellent circuit results, with the exception of the VCOs. Different GaAs PHEMT based VCO-topologies such as common gate push-push Colpitt and balanced negative gm, optimized for low phase noise have therefore been studied extensively. The latest results proves that it is possible to design VCOs comparable with the best published HBT-based oscillators. The metamorphic HEMT technology can offer additional advantages such as lower power consumption and InP-HEMT performance at the cost of GaAs. Recent results on 60 GHz amplifiers and mixers based on this technology are presented. |
| Sponsorship | IEEE Elec. Devices Soc |
| Starting Page | 93 |
| Ending Page | 96 |
| File Size | 323199 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780378334 |
| ISSN | 10647775 |
| DOI | 10.1109/GAAS.2003.1252371 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2003-11-09 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Phase noise Energy consumption Circuits Gallium arsenide PHEMTs Europe MMICs Frequency Oscillators MHEMTs |
| Content Type | Text |
| Resource Type | Article |
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