NDLI: Selective gas sensing with a single graphene-on-silicon transistor

Content Provider	IEEE Xplore Digital Library
Author	Balandin, A.A. Rumyantsev, S. Liu, G. Shur, M.S. Potyrailo, R.A.
Copyright Year	2012
Description	Author affiliation: Nano-Device Laboratory, Department of Electrical Engineering and Materials Science and Engineering Program, Bourns College of Engineering, University of California ? Riverside, 92521 USA (Balandin, A.A.; Liu, G.) \|\| Center for Integrated Electronics and Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 USA (Rumyantsev, S.; Shur, M.S.) \|\| Chemistry and Chemical Engineering, GE Global Research, Niskayuna, NY 12309 USA (Potyrailo, R.A.)
Abstract	The low-frequency 1/f noise in graphene transistors has been studied extensively owing to the proposed graphene applications in analog devices and communication systems [1–5]. The studies were motivated by the fact that the low-frequency noise can be up-converted by device nonlinearity and contribute to the phase noise of the system. Similarly, the sensor sensitivity is often limited by the electronic low-frequency noise. Therefore, noise is usually considered as one of the main limiting factors for the device or overall system operation. However, the electronic noise spectrum itself can be used as a sensing parameter increasing the sensor sensitivity and selectivity. Here, we show that vapors of different chemicals produce distinguishably different effects on the low-frequency noise spectra of the graphene-on-Si transistor. Our study showed that some gases change the electrical resistance of pristine graphene devices without changing their low-frequency noise spectra while other gases modify the noise spectra by inducing Lorentzian components with distinctive features. The characteristic corner frequency fC of the Lorentzian noise bulges in graphene devices is different for different chemicals and varies from fC=10 − 20 Hz for tetrahydrofuran to fC=1300 − 1600 Hz for chloroform. We tested the selected set of chemicals vapors on different graphene device samples and alternated different vapors for the same samples. The obtained results indicate that 1/f noise in combination with other sensing parameters can allow one to achieve the selective gas sensing with a single pristine graphene transistor. Our method of gas sensing with graphene does not require graphene surface functionalization or fabrication of an array of the devices with each tuned to a certain chemical. The observation of the Lorentzian components in the vapor-exposed graphene can also help in developing an accurate theoretical description of the noise mechanism in graphene.
Starting Page	1
Ending Page	2
File Size	292125
Page Count	2
File Format	PDF
ISBN	9781467309967
ISSN	21614644
e-ISBN	9781467309974
e-ISBN	9781467309950
DOI	10.1109/SNW.2012.6243283
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-10
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gases Sensors Low-frequency noise Transistors Chemicals Physics
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Selective gas sensing with MoS thin film transistors

Selective Sensing of Individual Gases Using Graphene Devices

Selective gas sensing by graphene

Selective gas sensing with a single pristine graphene transistor.

Influence of Minority Carrier Gas Donors on Low-Frequency Noise in Silicon Nanowires

Selective Gas Sensing With $h$ -BN Capped MoS₂ Heterostructure Thin-Film Transistors

Gas sensing by graphene/silicon hetrostructure

A versatile gas sensor with selectivity using a single graphene transistor

Selective multimodal gas sensing in epitaxial graphene by fourier transform infrared spectroscopy

Selective gas sensing with a single graphene-on-silicon transistor

Similar Documents

Selective gas sensing with MoS thin film transistors

Selective Sensing of Individual Gases Using Graphene Devices

Selective gas sensing by graphene

Selective gas sensing with a single pristine graphene transistor.

Influence of Minority Carrier Gas Donors on Low-Frequency Noise in Silicon Nanowires

Selective Gas Sensing With $h$ -BN Capped MoS2 Heterostructure Thin-Film Transistors

Gas sensing by graphene/silicon hetrostructure

A versatile gas sensor with selectivity using a single graphene transistor

Selective multimodal gas sensing in epitaxial graphene by fourier transform infrared spectroscopy

Selective gas sensing with a single graphene-on-silicon transistor

Selective Gas Sensing With $h$ -BN Capped MoS₂ Heterostructure Thin-Film Transistors