NDLI: Analysis of hysteresis characteristics of fabricated SiNW biosensor in aqueous environment with reference electrode

Content Provider	IEEE Xplore Digital Library
Author	Jung Han Lee Jieun Lee Min-Chul Sun Won Hee Lee Mihee Uhm Seonwook Hwang In-Young Chung Dong Myong Kim Dae Hwan Kim Byung-Gook Park
Copyright Year	2012
Description	Author affiliation: School of Electrical Engineering, Kookmin University, Seongbuk-gu, Seoul, 136-702, Korea (Won Hee Lee; Mihee Uhm; Seonwook Hwang; Dong Myong Kim; Dae Hwan Kim) \|\| Department of Electronics and Communications Engineering, Kwangwoon University, Seoul, 139-701, Korea (In-Young Chung) \|\| Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, 151-742, Korea (Jung Han Lee; Jieun Lee; Min-Chul Sun; Byung-Gook Park)
Abstract	A silicon nanowire field effect transistor (SiNW FET) was fabricated through the fabrication method compatible with that of MOSFET including back-end process without lift-off process. However, when it is working in an aqueous solution, the SiNW device as well as other transducer devices has various inherent instability problems such as hysteresis characteristics. We observed the hysteresis in DI water (DW) and confirmed that it is caused by mobile ion effect in DW with various experimental results.
Starting Page	1
Ending Page	2
File Size	847120
Page Count	2
File Format	PDF
ISBN	9781467309967
ISSN	21614644
e-ISBN	9781467309974
e-ISBN	9781467309950
DOI	10.1109/SNW.2012.6243305
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-10
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Fabrication Current measurement MOSFET circuits Logic gates FETs Hysteresis Stress
Content Type	Text
Resource Type	Article

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