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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Balda, J.C. Olejniczak, K.J. Redivo, M.I. Sundaram, A. |
| Copyright Year | 1994 |
| Description | Author affiliation: Dept. of Electr. Eng., Arkansas Univ., Fayetteville, AR, USA (Balda, J.C.; Olejniczak, K.J.; Redivo, M.I.) |
| Abstract | Improved performance of inverters may be obtained by increasing the switching frequency of the power semiconductor devices. Switching frequencies greater than the hard-switched limits may be obtained by using soft-switching techniques, The MOS-controlled thyristor (MCT) is a relatively new device showing a great potential in soft-switching applications involving high-power densities. Hence, the main objective of this paper is to extend the research work done on both soft-switched (resonant) inverters and MCTs by evaluating the operating characteristics of MCTs for switching frequencies up to approximately 75 kHz under a zero-voltage switching condition. A PCB is developed to subject the MCTs and passive components to stresses similar to those actually occurring in the resonant and actively-clamped resonant DC link inverter topologies. In addition, operation results of the operation of the MCT-based active clamp in the actively-clamp resonant DC link inverter and some practical implementation considerations are included.<> |
| Starting Page | 1192 |
| Ending Page | 1199 |
| File Size | 558380 |
| Page Count | 8 |
| File Format | |
| ISBN | 0780319931 |
| DOI | 10.1109/IAS.1994.377580 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1994-10-02 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Thyristors Switching frequency Zero voltage switching Resonance Power semiconductor devices Topology Clamps MOSFETs Stress Resonant inverters |
| Content Type | Text |
| Resource Type | Article |
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