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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yamashita, J. Yamada, T. Uchida, S. Yamaguchi, H. Ishizawa, S. |
| Copyright Year | 1996 |
| Description | Author affiliation: Power Device Div., Mitsubishi Electr. Corp., Fukuoka, Japan (Yamashita, J.) |
| Abstract | This paper describes a relation between dynamic saturation characteristics and turn-off loss of nonpunchthrough (NPT) IGBT for the first time. By experiment and numerical simulation, it was found that the turn-off loss, ESW(off), of NPT-IGBT strongly depends on the on-state pulse width, tw(on), ESW(off) increases with increasing tw(on), and this characteristics strongly depends on the thickness of the n-drift layer and the forward voltage drop. This is because the NPT-IGBT's dynamic carrier saturation speed determined by the hole velocity is much slower than that of PT-IGBT. Further, it is reported for the first time that the true ESW(off) of NPT-IGBT is two or three times larger than the turn-off loss value calculated using the ordinary definition (i.e. 90% of V/sub CE/ to 10% of I/sub C/). This is due to the power loss contribution generated by the tail current under 10% of I/sub C/ which continues for more than several tens of microseconds. From these facts, the temperature rise in the NPT-IGBT during switching is higher than the value to be expected from the turn-off time specified in the data sheets. These results should be noticed in the thermal design of power applications using NPT-IGBT. |
| Starting Page | 1425 |
| Ending Page | 1432 |
| File Size | 730534 |
| Page Count | 8 |
| File Format | |
| ISBN | 0780335449 |
| ISSN | 01972618 |
| DOI | 10.1109/IAS.1996.559252 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1996-10-06 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Insulated gate bipolar transistors Buffer layers Space vector pulse width modulation Temperature Tail Voltage Numerical simulation Anodes Power generation Power engineering and energy |
| Content Type | Text |
| Resource Type | Article |
| Subject | Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering |
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