NDLI: 1/f Noise model for PNP bipolar junction transistors based on radiation effect

Content Provider	IEEE Xplore Digital Library
Author	Qifeng Zhao Yiqi Zhuang Junlin Bao Wei Hu
Copyright Year	2015
Description	Author affiliation: Sch. of Microelectron.., Xidian Univ., Xi'an, China (Qifeng Zhao; Yiqi Zhuang; Junlin Bao) \|\| Sch. of Mechano-Electron. Eng., Xidian Univ., Xi'an, China (Wei Hu)
Abstract	It is found that ionizing-radiation can lead to 1/f noise degradations in PNP bipolar junction transistors. In this paper, it is suggested that the surface of the space charge region is the main source of the base surface 1/f noise. A model is developed which identifies the parameters and describes their interactive contribution to the base surface recombination current at the surface of the space charge region. Based on the theory of carrier number fluctuation and the model of base recombination surface current, a 1/f noise model is developed. This model suggests that the 1/f noise degradations are the result of accumulation of oxide-trapped charges and interface states. The radiations were performed in a $Co^{60}$ source at a dose rate of 0.1Gy(Si)/s up to a total dose of 700Gy(Si). The model can explain well the experimental results.
Starting Page	1
Ending Page	4
File Size	233035
Page Count	4
File Format	PDF
e-ISBN	9781467383356
DOI	10.1109/ICNF.2015.7288618
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-06-02
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Degradation Surface impedance Fluctuations Radiation Space charge Model 1/f noise 1f noise Junctions Bipolar junction transistors
Content Type	Text
Resource Type	Article

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