NDLI: Over-bias light emission due to higher order quantum noise of a tunnel junction

Content Provider	IEEE Xplore Digital Library
Author	Xu, F. Holmqvist, C. Belzig, W.
Copyright Year	2015
Description	Author affiliation: Dept. of Phys., Norwegian Univ. of Sci. & Technol., Trondheim, Norway (Holmqvist, C.) \|\| Fachbereich Phys., Univ. Konstanz, Konstanz, Germany (Xu, F.; Belzig, W.)
Abstract	Understanding tunneling from an atomically sharp tip to a metallic surface requires to account for interactions on a nanoscopic scale. Inelastic tunneling of electrons generates emission of photons, whose energies intuitively should be limited by the applied bias voltage. However, experiments [Phys. Rev. Lett. 102, 057401 (2009)] indicate that more complex processes involving the interaction of electrons with plasmon polaritons lead to photon emission characterized by over-bias energies. We propose a model of this observation in analogy to the dynamical Coulomb blockade, originally developed for treating the electronic environment in mesoscopic circuits. We explain the experimental finding quantitatively by the correlated tunneling of two electrons interacting with an LRC circuit modeling the local plasmon-polariton mode. To explain the over-bias emission, the non-Gaussian statistics of the tunneling dynamics of the electrons is essential.
Starting Page	1
Ending Page	4
File Size	282499
Page Count	4
File Format	PDF
e-ISBN	9781467383356
DOI	10.1109/ICNF.2015.7288573
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-06-02
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Noise Detectors Tunneling Conductors Junctions Integrated circuit modeling Photonics
Content Type	Text
Resource Type	Article

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