NDLI: Ultrafast response in optical nonlinearity of MBE grown GaAs/AlAs MQW and bulk GaAs

Content Provider	IEEE Xplore Digital Library
Author	Okuno, T. Masumoto, Y.
Copyright Year	2002
Description	Author affiliation: Inst. of Phys., Univ. of Tsukuba, Japan (Okuno, T.; Masumoto, Y.)
Abstract	Summary form only given. Time evolution of the optical transmission spectra in GaAs and its quantum well following femtosecond excitation shows an increase in transmission at an energy close to the excitation energy. This is spectral hole burning resulting from the initial nonthermal distribution of photoexcited carriers. This nonthermal distribution thermalizes in a time on the order of 200 fs. Although this fast response is very attractive, no application has been tried mainly because it is followed by a rather slow response (1-100 ps) due to cooling through carrier-phonon interaction and the band filling effect. In the present paper, two methods are studied experimentally to reduce this slow response component. Measurements are carried out at room temperature by the degenerate pump-probe method utilizing tunable 200 fs-width, 82 MHz repetition pulses from a titanium sapphire laser.
Sponsorship	IEEE/Lasers & Electro-Opt. Soc. OSA-Opt. Soc. America Quantum Electron. Div. Eur. Phys. Soc. Opt. Soc. Japanese Quantum Electron. Joint Group
Starting Page	226
Ending Page	227
File Size	277685
Page Count	2
File Format	PDF
ISBN	1557527067
DOI	10.1109/CLEO.2002.1033866
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-05-24
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Optical Soc. of America
Subject Keyword	Temperature Pulse measurements Cooling Gallium arsenide Tunable circuits and devices Optical pumping Filling Laser excitation Ultrafast optics Quantum well devices
Content Type	Text
Resource Type	Article

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