NDLI: Photovoltage and channel conductance analysis of buried gate MESFET with modulation frequency

Content Provider	IEEE Xplore Digital Library
Author	Jaya, T. Kannan, V.
Copyright Year	2010
Description	Author affiliation: Sathyabama University, Chennai, India (Jaya, T.; Kannan, V.)
Abstract	This paper provides new insight into the cause of photovotage generation and channel conductance variation in an ion-implanted buried-gate GaAs MESFET with front side illumination. When optical fiber with modulated frequency falls on the device, flow of charge carriers changes corresponding to the change in the wavelength and frequency of incident light. The photo voltage is developed due to the transport of holes across the schottky junction .The data suggest that the magnitude of photo voltage increases, and as a result, there are more uncovered ionic charges in the space charge region toward the drain-side of the gate. This analysis including surface states and the ion implanted buried-gate process. The access charge density at the drain-side of the depletion induces opposite charges in the gate electrode. Consequently, it gives forward biasing to the Schottky barrier gate which increases with increasing values of Ids. As a result, the modulation of channel conductance and photo-voltage characteristics due to the buried-gate GaAs MESFET becomes high effective. The results indicate very good performance of the device compared to other devices like MESFET under back illumination and MESFET with front illumination having surface gate.
Starting Page	293
Ending Page	297
File Size	488137
Page Count	5
File Format	PDF
ISBN	9781424491841
e-ISBN	9781424491834
DOI	10.1109/RSTSCC.2010.5712863
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-11-13
Publisher Place	India
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Frequency modulation Gallium arsenide Lighting AC model Logic gates MESFETs Optically illuminated field-effect transistor (OPFET) Junctions Substrates Optically controlled metal-semiconductor-field-effect transistor (MESFET) GaAs OPFET
Content Type	Text
Resource Type	Article

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