NDLI: GaN-based LEDs with flower shape ZnO nanorods by SILAR-based and hydrothermal methods

Content Provider	IEEE Xplore Digital Library
Author	Nan-Ming Lin Shih-Chang Shei Shoou-Jinn Chang
Copyright Year	2015
Description	Author affiliation: Dept. of Electr. Eng., Nat. Univ. of Tainan, Tainan, Taiwan (Nan-Ming Lin; Shih-Chang Shei) \|\| Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan (Shoou-Jinn Chang)
Abstract	The authors applied a simple and low-cost successive ionic layer adsorption and reaction (SILAR) and hydrothermal method (Hm) methods to form ZnO nanorods with the flower shape for GaN-based light-emitting diodes (LEDs). With 20 mA current injection, it was found that forward voltages were all 3.4 V when the 20mA output powers were 2.36, 2.69, 3.04, 3.24, and 3.0 mW for LED I, LED II, LED III, LED IV, and LED V, respectively. Furthermore, it was also found that the formation of ZnO nanorods on the top of ITO surface did not degrade the electrical properties.
Starting Page	1
Ending Page	3
File Size	1753959
Page Count	3
File Format	PDF
ISBN	9781479942084
DOI	10.1109/ISNE.2015.7131991
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-05-04
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	II-VI semiconductor materials SILAR Indium tin oxide Light emitting diodes Zinc oxide Rough surfaces LEDs Gallium nitride Hydrothermal Power generation Nanorods
Content Type	Text
Resource Type	Article

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GaN-based LEDs with flower shape ZnO nanorods by SILAR-based and hydrothermal methods