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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Wang Jing Xing Zuocheng Huang Ping Wang Tianran Fu Guitao |
| Copyright Year | 2010 |
| Description | Author affiliation: School of Computer, National University of Defense Technology, Changsha, 410073, China (Wang Jing; Xing Zuocheng; Huang Ping; Wang Tianran; Fu Guitao) |
| Abstract | Radiation hardened technologies are important to improve the anti-radiation performance of ICs. In this paper, several I/O cells in 0.18µm CMOS process are designed and radiation hardening technologies through layout design are researched. The function, timing and the effect of the ESD protection scheme for the I/O cells are analyzed by HSPICE simulation. The way of layout-level radiation hardening consists of single event effect and total ionizing dose effect. TCAD simulation is used to analyze the validity of the technologies adopted in the paper, and the experimental results indicate that the single event latch-up threshold increases effectively, and the anti-radiation performance is improved. |
| File Size | 1361766 |
| File Format | |
| ISBN | 9781424481040 |
| e-ISBN | 9781424481064 |
| DOI | 10.1109/ICINA.2010.5636369 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-10-18 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Radiation hardening Single Event Latch-up Petroleum Semiconductor device modeling Single Event Effect Radiation Hardened Heating TCAD ESD Silicon CMOS integrated circuits Integrated circuit modeling Total Ionizing Dose I/O cells |
| Content Type | Text |
| Resource Type | Article |
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