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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Condito, V. Lin, C.H. |
| Copyright Year | 1990 |
| Abstract | A high-performance BiCMOS data separator IC has been created with a 1.5 GHz NPN FT, 2 mu m EXAR modular CMOS process. Equivalent performance to bipolar implementations have been achieved at one half of the die size and nearly one quarter of the power. A versatile N2000 EXAR process and cell library was used for this design. The process features a well-characterized cell library containing nearly all required cells. Minimal cell design or adaption was necessary. The addition of two mask layers for buried layer and p base allows the inclusion of both an npn transistor and a lateral pnp device. There are 16 mask steps used. The process has two levels of metal and dual poly for interconnection.< |
| File Size | 325667 |
| File Format | |
| DOI | 10.1109/CICC.1990.124743 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1990-05-13 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | BiCMOS integrated circuits Disk drives Particle separators Frequency synchronization CMOS process Voltage-controlled oscillators Software libraries Optical signal processing Phase detection CMOS integrated circuits |
| Content Type | Text |
| Resource Type | Article |
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