NDLI: Analysis of SRAM neutron-induced errors based on the consideration of both charge-collection and parasitic-bipolar failure modes

Content Provider	IEEE Xplore Digital Library
Author	Osada, K. Kitai, N. Kamohara, S. Kawahara, T.
Copyright Year	2004
Description	Author affiliation: Central Res. Lab., Hitachi Ltd., Tokyo, Japan (Osada, K.)
Abstract	This paper describes an investigation of the upsetting of values in cells hit by alpha particles or neutrons, in which the feedback operation of the cross-coupled inverter in SRAM is accurately modeled through simultaneous device and circuit simulation. We demonstrate, for the first time, the existence and mechanism of a new parasitic-bipolar-failure (PBF) mode. Accurate values of critical charge (Q/sub cg/) for failure are calculated for both this mode and the conventional charge-collection-failure (CCF) mode. We identify opposite behaviors of Q/sub cg/ for the CCF and PBF modes with respect to the amount of charge at the storage node (Q/sub node/). The results on critical charge are also used to predict the soft-error rate and the prediction agrees with the results of measurement to within 30%. Based on the results, we propose design techniques for reduced SER.
Sponsorship	IEEE Solid-State Circuits Soc
Starting Page	357
Ending Page	360
File Size	403977
Page Count	4
File Format	PDF
ISBN	0780384954
DOI	10.1109/CICC.2004.1358820
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-10-06
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Failure analysis Random access memory Neutrons Circuit simulation Alpha particles Voltage Inverters Sea measurements Predictive models Medical simulation
Content Type	Text
Resource Type	Article

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