NDLI: Algaas Top Solar Cell for Mechanical Attachment in a Multi-Junction Tandem Concentrator Solar Cell Stack

Content Provider	IEEE Xplore Digital Library
Author	DiNetta, L.C. Hannon, M.H. Cummings, J.R. McNeely, J.B. Barnett, A.M.
Copyright Year	1990
Description	Author affiliation: University of Delaware (DiNetta, L.C.)
Abstract	Free-standing, transparent, tunable bandgap Al/sub x/Ga/sub 1-x/As top solar cells have been fabricated for mechanical attachment in a four terminal tandem stack solar cell. Evaluation of the device results have demonstrated 1.80 eV top solar cells with efficiencies of 18% (100X, AM0) which would yield stack efficiencies of 31% (100X, AM0) with a silicon bottom cell. When fully developed the Al/sub x/Ga/sub 1-x/As/Si mechanically-stacked two-junction solar cell concentrator system can provide efficiencies of 36% (AM0, 100X). AstroPower has fabricated Al/sub x/Ga/sub 1-x/As top solar cells with bandgaps from 1.66 eV to 2.08 eV. Liquid phase epitaxy (LPE) growth techniques have been used and LPE has been found to yield superior Al/sub x/Ga/sub 1-x/As material when compared to MBE or MOCVD. The result of this work is the first demonstration of a free-standing wide bandgap top cell technology which can be readily developed for commercial availability based on the Al-Ga-As mixed crystal system. Free-standing, tunable bandgap top solar cells with over 95% transparency to sub-bandgap photons will be made commercially available. The stack assembly technology will be readily applicable to any mechanically stacked multi-junction (MSMJ) system. Development of a wide bandgap top Solar cell is the only feasible method to obtain stack efficiencies greater than 40% at AM0. System efficiencies of greater than 40% can be realized when the AlGaAs top Solar cell is used in a three solar cell mechanical stack. This is a unique approach to improve the performance of space photovoltaic power systems.
Starting Page	587
Ending Page	592
File Size	410221
Page Count	6
File Format	PDF
ISBN	0816904901
DOI	10.1109/IECEC.1990.716961
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1990-08-12
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Photonic band gap Silicon Voltage Circuits Performance loss Epitaxial growth Crystalline materials Molecular beam epitaxial growth MOCVD
Content Type	Text
Resource Type	Article

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AlGaAs top solar cell for mechanical attachment in a multi-junction tandem concentrator solar cell stack

Development of a self-supporting, transparent AlGaAs top solar cell for mechanical attachment to an existing solar cell

Efficiency limits for space multi-junction concentrator solar cells

Choices for the epitaxial growth of GalnP/GaAs dual junction concentrator solar cells

Triple-junction solar cells for ultra-high concentrator applications

Integration of III-V materials on silicon substrates for multi-junction solar cell applications

Optimization of thin film coatings for textured silicon solar cell above low band gap solar cell

Modeling of two-junction, series-connected tandem solar cells using top-cell and coating thicknesses as adjustable parameters

High efficiency AlGaAs/Si tandem solar cell over 20%

Algaas Top Solar Cell for Mechanical Attachment in a Multi-Junction Tandem Concentrator Solar Cell Stack

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Algaas Top Solar Cell for Mechanical Attachment in a Multi-Junction Tandem Concentrator Solar Cell Stack