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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Umeno, M. Kato, T. Mingju Yang Azuma, Y. Soga, T. Jimbo, T. |
| Copyright Year | 1994 |
| Description | Author affiliation: Dept. of Electr. & Comput. Eng., Nagoya Inst. of Technol., Japan (Umeno, M.; Kato, T.; Mingju Yang; Azuma, Y.) |
| Abstract | A high-efficiency AlGaAs/Si tandem solar cell is fabricated by metal-organic chemical vapor deposition (MOCVD). It consists of a Al/sub 0.15/Ga/sub 0.85/As top cell and a Si bottom cell. The crystalline quality of the Al/sub 0.15/Ga/sub 0.85/As heteroepitaxial layer grown on Si is improved using a high-temperature growth process (800/spl deg/C) and thermal cycle annealings (300/spl sim/900/spl deg/C). The quantum efficiency of the Si bottom cell in the long wavelength region is improved by back surface field. The conversion efficiencies of the tandem solar cell under AMO and 1 sun measurement conditions with 4-terminal and 2-terminal configuration are 20.0% and 19.0%, respectively. The conversion efficiencies of the tandem solar cell with graded-band-gap emitter Al/sub x/Ga/sub 1-x/As layer achieved 20.6% and 19.9% under same condition with 4-terminal and 2-terminal configuration, respectively. |
| Starting Page | 1679 |
| Ending Page | 1684 |
| File Size | 400305 |
| Page Count | 6 |
| File Format | |
| ISBN | 0780314603 |
| DOI | 10.1109/WCPEC.1994.520541 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1994-12-05 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Photovoltaic cells Crystallization Annealing Electrodes Chemical vapor deposition MOCVD Photonic band gap Gallium arsenide Substrates Gold |
| Content Type | Text |
| Resource Type | Article |
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