NDLI: Low bandgap InGaAs thermophotovoltaic cells

Content Provider	IEEE Xplore Digital Library
Author	Wojtczuk, S.
Copyright Year	1996
Description	Author affiliation: Spire Corp., Bedford, MA, USA (Wojtczuk, S.)
Abstract	Thermophotovoltaic (TPV) systems convert low energy photons from low temperature heat sources into electrical power by means of photovoltaic cells. This paper describes low-bandgap indium gallium arsenide (In/sub x/Ga/sub 1-x/As) cells used in such systems whose composition can be "tuned" to particular wavelengths of interest. The intent of this paper is to give an overview of these cells and enough useful data so that TPV system designers can predict the performance of these cells in particular applications. Data are presented for 1.65 /spl mu/m (0.74 eV bandgap, In/sub 0.53/Ga/sub 0.47/As) as well as 2.25 /spl mu/m (0.55 eV, In/sub 0.72/Ga/sub 0.28/As) cutoff wavelength cells. Cell short-circuit photocurrent densities up to 5 A/cm/sup 2/ and open-circuit voltages over 480 mV (0.74 eV cells) and 310 mV (0.55 eV) are obtainable. Measured responsivity, dark current, and series resistance are presented and are used to numerically determine maximum output power for 0.55 eV and 0.74 eV InGaAs cells at blackbody temperatures of 1000 to 1500/spl deg/C.
Starting Page	974
Ending Page	978
File Size	475741
Page Count	5
File Format	PDF
ISBN	0780335473
ISSN	10893547
DOI	10.1109/IECEC.1996.553831
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-08-11
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photonic band gap Indium gallium arsenide Temperature Photovoltaic cells Photoconductivity Voltage Current measurement Electrical resistance measurement Power measurement Wavelength measurement
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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