NDLI: Thermal properties of SiC-ceramics substrate interface made by silver glass composition

Content Provider	IEEE Xplore Digital Library
Author	Kisiel, R. Szczepanski, Z. Sochacki, M. Chmielewski, M. Guziewicz, M. Strojny, A. Falat, T. Jakubowska, M. Tymicki, E. Jarosz, M.
Copyright Year	2011
Description	Author affiliation: Warsaw University of Technology, Mechatronics Department, Poland (Jarosz, M.) \|\| Wroclaw University of Technology, Faculty of Microsystem Electronics and Photonics, Poland (Falat, T.) \|\| Institute of Electron Technology, Warsaw, Poland (Guziewicz, M.) \|\| Institute of Electronic Materials Technology, Warsaw, Poland (Chmielewski, M.; Strojny, A.; Jakubowska, M.; Tymicki, E.) \|\| Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Poland (Kisiel, R.; Szczepanski, Z.; Sochacki, M.)
Abstract	In this work, thermal properties of Al2O3, AlN, SiC as well as some of SiC die attachment materials are characterized by the laser flash method. The thermal diffusivity, specific heat and thermal conductivity were measured or calculated for the systems consisted of Al2O3 or AlN substrates and SiC structures with die-attach layers between them. The experiments for single materials were carried out within wide temperature range of 50°C ÷ 800°C in argon atmosphere. Firstly, the thermal diffusivity and conductivity of Al2O3, AlN and SiC bulk material were extracted to increase the final results accuracy within full temperature range. Then 8×8 $mm^{2}$ SiC chips were attached to 8×8 $mm^{2}$ Al2O3 or AlN substrates by silver-glass composition. Thermal properties of SiC - ceramics connections were measured from room temperature up to 350°C. The connection quality was investigated by X-ray microtomography. The thermal conductivity of the interfacial silver glass composition between SiC and Al2O3 decreases from 120 W/mK at room temperature to 45 W/mK at temperature of 350°C and between SiC and AlN from 270 W/mK to100 W/mK, respectively. These values strongly depend of interface quality and thickness of interfacial layer.
Starting Page	98
Ending Page	102
File Size	630593
Page Count	5
File Format	PDF
ISBN	9781457721113
ISSN	21612536
e-ISBN	9781457721120
DOI	10.1109/ISSE.2011.6053558
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-05-11
Publisher Place	Slovakia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thermal conductivity Silicon carbide Conductivity Temperature measurement Glass Aluminum oxide
Content Type	Text
Resource Type	Article

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