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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Caldinhas Vaz, J. Caceres, J.L. Costa Freire, J. Perez, J. |
| Copyright Year | 1989 |
| Description | Author affiliation: Centro de Electronica Aplicada da Univ Tecnica INIC, Lisbon, Portugal (Caldinhas Vaz, J.) |
| Abstract | It is noted that series feedback oscillators stabilized with dielectric resonators (DRs) usually have the two resistive elements of the feedback network (DR and load) in different branches. A design technique for these oscillators is presented which leads to the maximum added power condition and optimization of frequency stability and noise immunity. The nonlinear characterization of the active device is obtained assuming an empirical relation to the power-gain saturation characteristics. The oscillator stability is verified by means of graphical methods based on the network determinant or and on the negative resistance oscillator theory of Kurokawa (1969). The six possible topologies are analyzed for a typical X-band GaAs MESFET using the proposed method. A comparison is made, taking into account the circuit implementation in microstrip, stability, AM and FM noise, spurious oscillations, transient response, and loaded Q-factor.< |
| Starting Page | 339 |
| Ending Page | 342 |
| File Size | 301118 |
| Page Count | 4 |
| File Format | |
| DOI | 10.1109/MELCON.1989.50051 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1989-04-11 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Dielectrics Oscillators Feedback Stability Design optimization Frequency Network topology Circuit topology Gallium arsenide MESFETs |
| Content Type | Text |
| Resource Type | Article |
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