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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Artal, E. Corbella, I. |
| Copyright Year | 1989 |
| Description | Author affiliation: ETSI Telecom., Barcelona, Spain (Artal, E.; Corbella, I.) |
| Abstract | Results on HEMT (high-electron-mobility transistor) microstrip low-noise amplifiers in the 3- GHz band are presented. The designed circuits were fabricated on 10 mil (0.254 mm) thick polytetrafluorethylene glass-fiber substrate ( epsilon /sub r/=2.17). The basic structure used in all matching networks is a pair of edge-coupled microstrip lines with two opposite ports open-circuited. No lumped DC-blocking capacitor is used. Results are presented on two amplifiers, both having input and output WR-28 interfaces. The first is a one-stage amplifier, and the waveguide-to-microstrip transition used in both ports consists of a ridge waveguide step transformer. The second has three stages and uses a microstrip E-probe transition to waveguide in both ports. The one-stage amplifier exhibits a noise figure lower than 4 dB and an associated gain greater than 5 dB at 30 GHz. The three-stage amplifier has a 5 dB noise figure and 15 dB gain at 27 GHz.< |
| Starting Page | 332 |
| Ending Page | 335 |
| File Size | 266535 |
| Page Count | 4 |
| File Format | |
| DOI | 10.1109/MELCON.1989.50049 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1989-04-11 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | HEMTs Low-noise amplifiers Microstrip Dielectric substrates Circuit noise Manufacturing Capacitors Probes Dielectric constant Scattering parameters |
| Content Type | Text |
| Resource Type | Article |
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