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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Bobbo, M. Passauo, V.M.N. Giorgio, A. Perri, A.G. |
| Copyright Year | 1999 |
| Description | Author affiliation: Dipt. di Elettrotecnica ed Elettronica, Bari Politecnico, Italy (Bobbo, M.) |
| Abstract | In this paper, the influence of gate length on the performance of GaAs MESFETs by a physical I-V model has been evaluated. The Chang-Fetterman electron mobility relationship has been used in the I-V model, based on the analytical solution of the two-dimensional Poisson equation and current-continuity equation. Numerical results are shown in terms of calculated I-V curves for MESFETs already presented in literature, by varying the gate length. These curves illustrate the good agreement with experimental data and with other numerical models. The greater simplicity, deeper physical insight and possibility of great extension to a fully physical C-V approach makes this model more attractive than those based on other methods. |
| Starting Page | 1675 |
| Ending Page | 1677 |
| File Size | 230779 |
| Page Count | 3 |
| File Format | |
| ISBN | 0780356829 |
| DOI | 10.1109/ICECS.1999.814497 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1999-09-05 |
| Publisher Place | Cyprus |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Gallium arsenide MESFETs Semiconductor process modeling Voltage Poisson equations Electron mobility Capacitance-voltage characteristics FETs Numerical models Solid modeling |
| Content Type | Text |
| Resource Type | Article |
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