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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Zou, H.F. Zhang, Z.F. |
| Copyright Year | 2010 |
| Description | Author affiliation: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, China (Zou, H.F.; Zhang, Z.F.) |
| Abstract | The current study revealed that the growth kinetics and the interfacial reaction of the Cu/Sn/Ag couples with different thickness solder. For the Cu/Sn/Ag couples, plate-type Ag3Sn was firstly formed at the Sn/Cu interface rather than at the Sn/Ag interface for the Cu/Sn/Ag couple at the initial state of the reflow procedure when the solder thicknesses is 150 µm or 300 µm. Besides, the microstructure of the Cu/Sn interface was different from that of Ag/Sn interface for the Cu/Sn (300 µm)/Ag couple. With increasing reflow time to 60s, plate-type Ag3Sn was detected at Sn/Ag and Sn/Cu interfaces, and the columnar Cu6Sn5 grains were also observed at the Cu/Sn interface for the Ag/Sn (150 µm)/Cu couple under liquid-state condition. However, for the Cu/Sn(40µm)/Ag couple, columnar Cu6Sn5 and plate-type Ag3Sn were not observed, and few Cu-Sn IMC particles were observed in the solder even after long time aging. The growth kinetics of intermetallic compounds was also investigated for the Cu/Sn/Ag couples with different thickness solder. |
| Starting Page | 418 |
| Ending Page | 421 |
| File Size | 1856846 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424481408 |
| e-ISBN | 9781424481422 |
| DOI | 10.1109/ICEPT.2010.5582863 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-08-16 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Tin Copper Aging Electronics packaging Microstructure Morphology |
| Content Type | Text |
| Resource Type | Article |
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