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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Shao, T.L. Chen, I.H. Chih Chen |
| Copyright Year | 2004 |
| Description | Author affiliation: Dept. of Material Sci. & Eng., Nat. Chiao-Tung Univ., Hsin-Chu, Taiwan (Shao, T.L.; Chen, I.H.; Chih Chen) |
| Abstract | The electromigration-induced failure of SnAg3.5 flip chip solder bumps was investigated at the current density of 1 /spl times/ 10/sup 4/ A/cm/sup 2/ at 150/spl deg/C, and they failed after 22 hours of current stressing. Failure was found to be on anode/chip side, and large (Cu,Ni)/sub 6/Sn/sub 5/ intermetallic compounds (IMCs) were observed on the interface of the UBM and the solder bump. A novel electromigration failure mechanism is proposed. Nickel atoms were migrated by electron flow from substrate side to chip side to form (Cu,Ni)/sub 6/Sn/sub 5/ IMCs. The volume expansion due to the IMC formation may induce local high stress around the UBM and fail the contact of the anode/chip side. |
| Starting Page | 979 |
| Ending Page | 982 |
| File Size | 707428 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780383656 |
| DOI | 10.1109/ECTC.2004.1319458 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2004-06-04 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Electromigration Failure analysis Anodes Tin Flip chip Current density Intermetallic Nickel Electrons Stress |
| Content Type | Text |
| Resource Type | Article |
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