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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Palacios, Tomas Udrea, Florin |
| Copyright Year | 2008 |
| Description | Author affiliation: Cambridge University, USA (Udrea, Florin) || Massachusetts Institute of Technology, USA (Palacios, Tomas) |
| Abstract | The session deals with novel high voltage devices and technologies. The first part of the session focuses on high performance, low Ron, high voltage devices in sub-micron CMOS processes while the second presents exciting new structures in GaN high voltage devices. The first paper by T. Khan et al., from Freescale Semiconductor deals with a novel Resurf type LDMOS structure in 0.13 mm smart power CMOS for improving the safe operating area while maintaining a low on-state resistance. The second by M. Sambi et al., from ST Microelectronics is on integration of a 190 V Lateral Insulated Gate Bipolar Transistor (LIGBT) in a SOI BCD 0.35 mm technology. The paper reports on high power capability, around 2.5 times higher than an equivalent LDMOSFET implemented in the same technology. Our third paper is an invited paper by R.A. Bianchi et al., from STMicroelectronics and CEA-LETI presenting an exciting review of high voltage LDMOS type devices in advanced sub-micron CMOS technologies. Applications are in analogue baseband and RF power as well as mobile handsets. The fourth paper of the session, and the first on GaN devices, by W. Chen et al., from HKUST, demonstrates the use of fluorine plasma treatment to monolithically integrate GaN HEMTs and lateral field rectifiers. Using this technology, the HKUST group fabricated a GaN-based boost converter operating at 1 MHz. H. Ishida et al., from Matsushita Electric discuss, in the fifth paper of the session, the fabrication of GaN superjunction diodes with record performance based on polarization-induced sheet charges. The session finishes with a study, by M. Wang et al., from HKUST, on the effect of fluorine plasma on the breakdown voltage of AlGaN/GaN HEMTs, where the back-barrier induced by the fluorine ions increases the breakdown voltage 35%. |
| Starting Page | 1 |
| Ending Page | 1 |
| File Size | 98284 |
| Page Count | 1 |
| File Format | |
| ISBN | 9781424423774 |
| ISSN | 81642284 |
| DOI | 10.1109/IEDM.2008.4796631 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-12-15 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Semiconductor devices CMOS technology Gallium nitride HEMTs MODFETs Low voltage CMOS process Microelectronics Insulated gate bipolar transistors Paper technology |
| Content Type | Text |
| Resource Type | Article |
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