NDLI: The effects of internal R. F. attenuation on the power output performance of bipolar transistors

Content Provider	IEEE Xplore Digital Library
Author	Hunt, R.E. Zoroglu, D.S.
Copyright Year	1971
Description	Author affiliation: Motorola Inc., Phoenix, Ariz. (Hunt, R.E.)
Abstract	In the design of microwave bipolar transistors, there has been extensive utilization of three basic geometries: interdigitated, overlay and mesh emitter. In view of the obvious cost-performance-reliability trade-offs of the geometrical designs, an understanding of attenuation along un-metallized stripes is imperative. This paper summarizes an experimental and theoretical investigation of the variation of output power by the r.f. attenuation along a diffused stripe where current was fed from one end only. The experiments have employed the overlay geometry with 2.5 µm linewidths and 4 µm spaces. Diffused stripe length, Le, was varied while the emitter periphery, Pe, the base area, Ab, and the emitter area, Aewere kept constant. At a frequency of 1 GHz, it was observed that for the same input power, the output power decreased by\sim 25%in Class C operation and\sim44%in Class A as Lewas increased from 19 µm to 36 µm. Interestingly, in both modes of operation, no change in output power was noted for Le's between 12 µm and 19 µm. The obvious implication is that in these structures r.f. attenuation does not play a dominant role until the stripes reach a length of ∼ 20 µm, allowing the use of quite wide emitter metallization. A simple analysis has been carried out to better understand the r.f. attenuation mechanism and relate it to experimental data. The attenuation constant,a, was calculated using ordinary transmission line theory. Then, the collector current, Ie, was found employing this value ofa. Variation of the output power was, then, inferred from the variation of $Ie^{2}.$ Correlation between theory and experiment is satisfactory considering the simplifications introduced into the analysis.
Starting Page	92
Ending Page	94
File Size	154972
Page Count	3
File Format	PDF
DOI	10.1109/IEDM.1971.188410
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1971-10-11
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Attenuation Bipolar transistors Power generation Plasma density Geometry Metallization Microwave transistors Transmission line theory Telephony Laboratories
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

X-Band Silicon Power Transistor

Effect of base potential distribution on thermal runaway and the power limitation of the heterojunction bipolar transistor with circular dot geometry

Effects of collector doping on dc and rf performance of AiInAs/GaInAs/InP double heterojunction bipolar transistors

Two-dimensional distributed base-resistance effects in bipolar transistors

Distributed theory for microwave bipolar transistors

Microwave bipolar silicon power transistors

Investigation of the Transmission Line Loss on the Performance of the HBT_HEMT Matrix Amplifier

An experimental study of distributed effects in a microwave bipolar transistor

Effects of metallization lay-out on turn-off failure of modern power bipolar transistors

The effects of internal R. F. attenuation on the power output performance of bipolar transistors

Similar Documents

X-Band Silicon Power Transistor

Effect of base potential distribution on thermal runaway and the power limitation of the heterojunction bipolar transistor with circular dot geometry

Effects of collector doping on dc and rf performance of AiInAs/GaInAs/InP double heterojunction bipolar transistors

Two-dimensional distributed base-resistance effects in bipolar transistors

Distributed theory for microwave bipolar transistors

Microwave bipolar silicon power transistors

Investigation of the Transmission Line Loss on the Performance of the HBT_HEMT Matrix Amplifier

An experimental study of distributed effects in a microwave bipolar transistor

Effects of metallization lay-out on turn-off failure of modern power bipolar transistors

The effects of internal R. F. attenuation on the power output performance of bipolar transistors