NDLI: GaAs-Si photon-activated switch

Content Provider	IEEE Xplore Digital Library
Author	Pieczonka, W.A. Yeh, T.H. Polgar, P. Roy, M.M.
Copyright Year	1964
Description	Author affiliation: International Business Machines Corporation, Poughkeepsie, New York (Pieczonka, W.A.)
Abstract	A light-activated low-level switch has been developed for multiplexing applications. The switch consists of an electroluminescent GaAs PN diode and a double emitter silicon transistor. (Both NPN and PNP units have been made.) The two (light emitter and detector) are coupled optically. The switch is a substantial improvement over existing switching devices used in multiplexors. A general design theory based on Ebers & Moll's paper is given with special emphasis on breakdown voltage, "ON" impedance, offset voltage, and switching speed. It is shown how the design considerations lead to a specific geometry for the detector. Results of extensive testing are reported. The devices operating with a 100 mw diode input showed the following characteristics: NPN PNP BVEE20-25 v 30-40 v REE10-15 \Omega <100 \OmegaVo<50 µv <50 µv ton{RL=10K} {RL=1M} < 3 µsec < 3µsec toff{RL=10K} <10 µsec <10 µsec {RL=1M} <150 µsec <150 µsec
Starting Page	42
Ending Page	42
File Size	79248
Page Count	1
File Format	PDF
DOI	10.1109/IEDM.1964.187462
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1964-10-29
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Optical switches Electroluminescence Gallium arsenide Silicon Light emitting diodes Optical detectors Optical coupling Stimulated emission Impedance Breakdown voltage
Content Type	Text
Resource Type	Article

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