NDLI: A compatible technique for the formation of tantalum thin-film resistors on silicon integrated circuits

Content Provider	IEEE Xplore Digital Library
Author	Walker, M.J.
Copyright Year	1964
Description	Author affiliation: Philco Corporation, Lansdale, Pennsylvania (Walker, M.J.)
Abstract	Sikina, Casey, et al have indicated that a tantalum thin-film resistor complement on silicon integrated circuits will yield increased performance and lower cost for most microcircuits now fabricated using the silicon planar process alone. This paper describes a process in which tantalum is used as the material for the formation of film resistors on silicon integrated circuits. Tantalum was selected for this purpose over other thin-film materials for the following reasons: 1. It has a wide and desirable range of available bulk resistivities when used in conjunction with a specialized sputtering technique. 2. It has the ability to form a chemically inert, stable, and self-limiting surface oxide either by thermal or anodic means. 3. A relatively low thermal coefficient of resistance is associated with tantalum films in the required sheet resistivity range. Solutions are described to two of the basic problems encountered in the development of the process. The first problem involves the inability of sputtered tantalum to form a satisfactory low-resistance ohmic contact to silicon contacts. The solution is to deposit and alloy an aluminum contacting finger to the silicon contact before deposition of the resistor tantalum. The second problem is the surface damage and potential penetration of the protective SiO2by the tantalum etching solution. A technique is described for protecting the SiO2with a thin metal oxide layer which, for the required etching time, is impervious to the tantalum etching solution.
Starting Page	28
Ending Page	28
File Size	76143
Page Count	1
File Format	PDF
DOI	10.1109/IEDM.1964.187451
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1964-10-29
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Semiconductor thin films Thin film circuits Resistors Silicon Etching Sputtering Conductivity Thermal resistance Protection Integrated circuit yield
Content Type	Text
Resource Type	Article

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