NDLI: Equipment and methodology aspects of nano-thick film growth by consecutive gas pulsed chemical vapor deposition technique at low temperatures

Content Provider	IEEE Xplore Digital Library
Author	Vasilyev, V.Y. Song, Y.W.
Copyright Year	2010
Description	Author affiliation: Korea Polytechnic University, Siheung-City, Republic of Korea (Song, Y.W.) \|\| Novosibirsk State Technical University, Russia (Vasilyev, V.Y.)
Abstract	Equipment and methodology aspects of precision nano-thick film growth by consecutive gas pulsed chemical vapor deposition (CVD) technique at low temperature are analyzed. The main parameters of repeatable pulsed CVD processes include the deposition chamber time constant, gas pulse shape and characteristics, cycle design and reactant pulse durations, substrate exposure characteristics, and substrate temperature repeatability. Results of presented systematic analysis have been used for successful development of optimized equipment parameters and repeatable consecutive pulsed thin film deposition methodology. Experimental verification has been performed for the case of pulsed ruthenium metal thin film deposition at low temperatures. The developed methodology has allowed exclusion of the interaction of reactant remnants in the gas phase, a reduction in film non-uniformity within 200 mm wafers, as well as an improvement in deposition kinetic analysis and atomic layer deposition window search, leading to enhanced experimental efficiency and reduced experimental cost.
Starting Page	9
Ending Page	17
File Size	1560231
Page Count	9
File Format	PDF
ISBN	9781424466269
e-ISBN	9781424466283
DOI	10.1109/EDM.2010.5568687
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-30
Publisher Place	Russia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Substrates Switches Atomic layer deposition equipment Thin films consecutive gas pulsed deposition atomic-layer growth
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Interdiffusion at the substrate-film interface of BiFeO3-PbTiO3 thin films on Pt/Si substrates

Ultra-thin silicon nitride films on Si by jet vapor deposition

Characterization of SiC thin films grown on Si by inductively coupled plasma chemical vapor deposition at low temperatures

High growth rate transparent conducting zinc-oxide thin film prepared by metalorganic chemical vapor deposition technique for device applications

ZnO thin films synthesized by chemical vapor deposition

Advanced thin films for electronics and opto-electronic's by atomic layer epitaxy

Electro-epitaxial growth of thin film silicon

Gas phase considerations for the deposition of thin film silicon solar cells by VHF-PECVD at low substrate temperatures

Atomic layer deposition: a film technology for the nano device era

Equipment and methodology aspects of nano-thick film growth by consecutive gas pulsed chemical vapor deposition technique at low temperatures

Similar Documents

Interdiffusion at the substrate-film interface of BiFeO3-PbTiO3 thin films on Pt/Si substrates

Ultra-thin silicon nitride films on Si by jet vapor deposition

Characterization of SiC thin films grown on Si by inductively coupled plasma chemical vapor deposition at low temperatures

High growth rate transparent conducting zinc-oxide thin film prepared by metalorganic chemical vapor deposition technique for device applications

ZnO thin films synthesized by chemical vapor deposition

Advanced thin films for electronics and opto-electronic's by atomic layer epitaxy

Electro-epitaxial growth of thin film silicon

Gas phase considerations for the deposition of thin film silicon solar cells by VHF-PECVD at low substrate temperatures

Atomic layer deposition: a film technology for the nano device era

Equipment and methodology aspects of nano-thick film growth by consecutive gas pulsed chemical vapor deposition technique at low temperatures